1-5 December 2019
Africa/Johannesburg timezone
Note: Intel Keynote starts at 18:00 today (Monday)

NEXTGenIO: exploring the potential of non-volatile memory in HPC

2 Dec 2019, 14:30


Talk Storage and IO HPC Technology


David Homan (EPCC)


Memory and storage read and write costs can lead to a significant loss of time and energy in current HPC systems. Byte-addressable non-volatile memory (NVM) could provide considerable improvements in both time and energy requirements over conventional DRAM memory. Using Optane DCPMM, Intel's new byte-addressable and persistent memory, the NEXTGenIO project investigated the performance of NVRAM by designing, building and testing a bespoke prototype NVM system. The main goal of the project was to explore the potential of NVRAM in overcoming performance bottlenecks in I/O and main memory, which are considered significant barriers to Exascale computing.

In this talk we will give a brief overview of the NEXTGenIO system (192GB DRAM and 3TB of NVM per dual socket node), and the various NVRAM usage modes. The results from a number of investigative test cases run on the NEXTGenIO prototype system will be presented. In particular we will discuss I/O performance, run-time, and energy consumption for applications with large I/O demands, such as OpenFOAM and CASTEP. Comparison of the results from NVRAM and DRAM shows that NVRAM can indeed provide significant improvement in both performance and energy consumption.

Primary author

David Homan (EPCC)

Presentation Materials

There are no materials yet.